A robust shallow trench isolation (STI) with SiN pull

The SiN pull-back process is known for reducing divot around the top comer in conventional STI. Both LOCOS and PB-STI can result in divot free. It is also ...

2013年7月17日 — In the STI technique, a trench surrounding a semiconductor device such as a transistor is etched into a semiconductor substrate and then filled ...

2002年10月11日 — A method for forming shallow trench isolation (STI) features to reduce or avoid divot formation at STI trench corners including providing a ...

STI divot formation is eliminated or substantially reduced by employing a very thin nitride polish stop layer, e.g., no thicker than 400 Å. The very thin ...

由 Z Sui 著作 — ABSTRACT. In this paper, different etching methods and adjustments of the etching amount have been tried and the effect of increased depth of the STI divot ...

A method for forming shallow trench isolation (STI) features to reduce or avoid divot formation at STI trench corners including providing a shallow trench ...

由 H Tai 著作 · 2016 · 被引用 1 次 — Shallow trench isolation (STI) divot shape control is always one of most ... This study indicated that divot formation is highly correlated to etching ...